MOSFET транзисторы силовые

03N06 GOFORD SEMI SOT-23 N 60 ±20 3 80 90 65 70 1.7
60V, 3A, N-CHANNEL, Power MOSFET, RoHS, Halogen Free, SOT-23
Type: N
Vds(V): 60
Vgs(V): ±20
Id(A): 3
Rds(on) mΩ (max) @Vgs=10V: 80
Rds(on) mΩ (max) @Vgs=4.5V: 90
Rds(on) mΩ (typ) @Vgs=4,5V: 70
Rds(on) mΩ (typ) @Vgs=10V: 65
Pd(W): 1.7
ESD Diode: NO
Vgs(th) max (V): 1.2
Qg(nC): 14.6
Qgs(nC): 1.6
Qgd(nC): 3
Ciss(pF): 458
Crss(pF): 21
Technology: TRENCH
03N06A GOFORD SEMI SOT-23 N 60 ±20 3 80 90 65 70 1.7
60V, 3A, N-CHANNEL, Power MOSFET, Automotive, RoHS, Halogen Free, SOT-23
Type: N
Vds(V): 60
Vgs(V): ±20
Id(A): 3
Rds(on) mΩ (max) @Vgs=10V: 80
Rds(on) mΩ (max) @Vgs=4.5V: 90
Rds(on) mΩ (typ) @Vgs=4,5V: 70
Rds(on) mΩ (typ) @Vgs=10V: 65
Pd(W): 1.7
ESD Diode: NO
Vgs(th) max (V): 1.2
Qg(nC): 14.6
Qgs(nC): 1.6
Qgd(nC): 3
Ciss(pF): 458
Crss(pF): 21
Technology: TRENCH
03N06L GOFORD SEMI SOT-23-3 N 60 ±20 3 95 100 73 77 1.7
60V, 3A, N-CHANNEL, Power MOSFET, RoHS, Halogen Free, SOT-23-3
Type: N
Vds(V): 60
Vgs(V): ±20
Id(A): 3
Rds(on) mΩ (max) @Vgs=10V: 95
Rds(on) mΩ (max) @Vgs=4.5V: 100
Rds(on) mΩ (typ) @Vgs=4,5V: 77
Rds(on) mΩ (typ) @Vgs=10V: 73
Pd(W): 1.7
ESD Diode: NO
Vgs(th) max (V): 1.2
Qg(nC): 15
Qgs(nC): 2
Qgd(nC): 3
Ciss(pF): 480
Crss(pF): 23
Technology: TRENCH
06N06L GOFORD SEMI SOT-23-3 N 60 ±20 5.5 45 50 36 40 2
60V, 5.5A, N-CHANNEL, Power MOSFET, RoHS, Halogen Free, SOT-23-3
Type: N
Vds(V): 60
Vgs(V): ±20
Id(A): 5.5
Rds(on) mΩ (max) @Vgs=10V: 45
Rds(on) mΩ (max) @Vgs=4.5V: 50
Rds(on) mΩ (typ) @Vgs=4,5V: 40
Rds(on) mΩ (typ) @Vgs=10V: 36
Pd(W): 2
ESD Diode: NO
Vgs(th) max (V): 2.5
Qg(nC): 16
Qgs(nC): 2
Qgd(nC): 4
Ciss(pF): 765
Crss(pF): 40
Technology: TRENCH
06N06LA GOFORD SEMI SOT-23-3 N 60 ±20 5.5 45 50 36 40 2
60V, 5.5A, N-CHANNEL, Power MOSFET, Automotive, RoHS, Halogen Free, SOT-23-3
Type: N
Vds(V): 60
Vgs(V): ±20
Id(A): 5.5
Rds(on) mΩ (max) @Vgs=10V: 45
Rds(on) mΩ (max) @Vgs=4.5V: 50
Rds(on) mΩ (typ) @Vgs=4,5V: 40
Rds(on) mΩ (typ) @Vgs=10V: 36
Pd(W): 2
ESD Diode: NO
Vgs(th) max (V): 2.5
Qg(nC): 16
Qgs(nC): 2
Qgd(nC): 4
Ciss(pF): 765
Crss(pF): 40
Technology: TRENCH
18N10 GOFORD SEMI TO-252 N 100 ±20 35 53 63 36 39 80
100V, 35A, N-CHANNEL, Power MOSFET, RoHS, Halogen Free, TO-252
Type: N
Vds(V): 100
Vgs(V): ±20
Id(A): 35
Rds(on) mΩ (max) @Vgs=10V: 53
Rds(on) mΩ (max) @Vgs=4.5V: 63
Rds(on) mΩ (typ) @Vgs=4,5V: 39
Rds(on) mΩ (typ) @Vgs=10V: 36
Pd(W): 80
ESD Diode: NO
Vgs(th) max (V): 2.5
Qg(nC): 26
Qgs(nC): 7.4
Qgd(nC): 3.8
Ciss(pF): 2161
Crss(pF): 53
Technology: TRENCH
18N10A GOFORD SEMI TO-252 N 100 ±20 35 53 63 36 39 80
100V, 35A, N-CHANNEL, Power MOSFET, Automotive, RoHS, Halogen Free, TO-252
Type: N
Vds(V): 100
Vgs(V): ±20
Id(A): 35
Rds(on) mΩ (max) @Vgs=10V: 53
Rds(on) mΩ (max) @Vgs=4.5V: 63
Rds(on) mΩ (typ) @Vgs=4,5V: 39
Rds(on) mΩ (typ) @Vgs=10V: 36
Pd(W): 80
ESD Diode: NO
Vgs(th) max (V): 2.5
Qg(nC): 26
Qgs(nC): 7.4
Qgd(nC): 3.8
Ciss(pF): 2161
Crss(pF): 53
Technology: TRENCH
18N20 GOFORD SEMI TO-252 N 200 ±20 18 190 129 65.8
200V, 18A, N-CHANNEL, Power MOSFET, RoHS, Halogen Free, TO-252
Type: N
Vds(V): 200
Vgs(V): ±20
Id(A): 18
Rds(on) mΩ (max) @Vgs=10V: 190
Rds(on) mΩ (typ) @Vgs=10V: 129
Pd(W): 65.8
ESD Diode: NO
Vgs(th) max (V): 3
Qg(nC): 18
Qgs(nC): 4
Qgd(nC): 5.3
Ciss(pF): 847
Crss(pF): 13
Technology: PLANAR
18N20A GOFORD SEMI TO-252 N 200 ±20 18 190 129 65.8
200V, 18A, N-CHANNEL, Power MOSFET, Automotive, RoHS, Halogen Free, TO-252
Type: N
Vds(V): 200
Vgs(V): ±20
Id(A): 18
Rds(on) mΩ (max) @Vgs=10V: 190
Rds(on) mΩ (typ) @Vgs=10V: 129
Pd(W): 65.8
ESD Diode: NO
Vgs(th) max (V): 3
Qg(nC): 18
Qgs(nC): 4
Qgd(nC): 5.3
Ciss(pF): 847
Crss(pF): 13
Technology: PLANAR
18N20F GOFORD SEMI TO-220F N 200 ±20 18 190 123 35
200V, 18A, N-CHANNEL, Power MOSFET, RoHS, Halogen Free, TO-220F
Type: N
Vds(V): 200
Vgs(V): ±20
Id(A): 18
Rds(on) mΩ (max) @Vgs=10V: 190
Rds(on) mΩ (typ) @Vgs=10V: 123
Pd(W): 35
ESD Diode: NO
Vgs(th) max (V): 3
Qg(nC): 18
Qgs(nC): 4
Qgd(nC): 5.3
Ciss(pF): 852
Crss(pF): 15
Technology: PLANAR
18N20J GOFORD SEMI TO-251 N 200 ±20 18 190 131 65.8
200V, 18A, N-CHANNEL, Power MOSFET, RoHS, Halogen Free, TO-251
Type: N
Vds(V): 200
Vgs(V): ±20
Id(A): 18
Rds(on) mΩ (max) @Vgs=10V: 190
Rds(on) mΩ (typ) @Vgs=10V: 131
Pd(W): 65.8
ESD Diode: NO
Vgs(th) max (V): 3
Qg(nC): 18
Qgs(nC): 4
Qgd(nC): 5.3
Ciss(pF): 850
Crss(pF): 15
Technology: PLANAR
18N20T GOFORD SEMI TO-220 N 200 ±20 18 160 136 110
200V, 18A, N-CHANNEL, Power MOSFET, RoHS, Halogen Free, TO-220
Type: N
Vds(V): 200
Vgs(V): ±20
Id(A): 18
Rds(on) mΩ (max) @Vgs=10V: 160
Rds(on) mΩ (typ) @Vgs=10V: 136
Pd(W): 110
ESD Diode: NO
Vgs(th) max (V): 3
Qg(nC): 17.7
Qgs(nC): 3.9
Qgd(nC): 5.2
Ciss(pF): 836
Crss(pF): 3.81
Technology: PLANAR
20N06 GOFORD SEMI TO-252 N 60 ±20 25 27 35 21 23 41
60V, 25A, N-CHANNEL, Power MOSFET, RoHS, Halogen Free, TO-252
Type: N
Vds(V): 60
Vgs(V): ±20
Id(A): 25
Rds(on) mΩ (max) @Vgs=10V: 27
Rds(on) mΩ (max) @Vgs=4.5V: 35
Rds(on) mΩ (typ) @Vgs=4,5V: 23
Rds(on) mΩ (typ) @Vgs=10V: 21
Pd(W): 41
ESD Diode: NO
Vgs(th) max (V): 2
Qg(nC): 25
Qgs(nC): 4.5
Qgd(nC): 6.5
Ciss(pF): 1609
Crss(pF): 66
Technology: TRENCH
2300F GOFORD SEMI SOT-23 N 20 ±12 4.5 27 19 1
20V, 4.5A, N-CHANNEL, Power MOSFET, RoHS, Halogen Free, SOT-23
Type: N
Vds(V): 20
Vgs(V): ±12
Id(A): 4.5
Rds(on) mΩ (max) @Vgs=4.5V: 27
Rds(on) mΩ (typ) @Vgs=4,5V: 19
Pd(W): 1
Rds(on) mΩ (max) @Vgs=2.5V: 41
Rds(on) mΩ (typ) @Vgs=2,5V: 25
ESD Diode: NO
Vgs(th) max (V): 0.9
Qg(nC): 11.6
Qgs(nC): 0.9
Qgd(nC): 2.3
Ciss(pF): 363
Crss(pF): 71
Technology: TRENCH
2300FA GOFORD SEMI SOT-23 N 20 ±12 4.5 27 19 1
20V, 4.5A, N-CHANNEL, Power MOSFET, Automotive, RoHS, Halogen Free, SOT-23
Type: N
Vds(V): 20
Vgs(V): ±12
Id(A): 4.5
Rds(on) mΩ (max) @Vgs=4.5V: 27
Rds(on) mΩ (typ) @Vgs=4,5V: 19
Pd(W): 1
Rds(on) mΩ (max) @Vgs=2.5V: 41
Rds(on) mΩ (typ) @Vgs=2,5V: 25
ESD Diode: NO
Vgs(th) max (V): 0.9
Qg(nC): 11.6
Qgs(nC): 0.9
Qgd(nC): 2.3
Ciss(pF): 363
Crss(pF): 71
Technology: TRENCH
2301 GOFORD SEMI SOT-23 P -20 ±12 -3 56 51 1
-20V, -3A, P-CHANNEL, Power MOSFET, RoHS, Halogen Free, SOT-23
Type: P
Vds(V): -20
Vgs(V): ±12
Id(A): -3
Rds(on) mΩ (max) @Vgs=4.5V: 56
Rds(on) mΩ (typ) @Vgs=4,5V: 51
Pd(W): 1
Rds(on) mΩ (max) @Vgs=2.5V: 80
Rds(on) mΩ (typ) @Vgs=2,5V: 69
ESD Diode: NO
Vgs(th) max (V): -0.9
Qg(nC): 8
Qgs(nC): 1
Qgd(nC): 2
Ciss(pF): 550
Crss(pF): 75
Technology: TRENCH
2301A GOFORD SEMI SOT-23 P -20 ±12 -3 56 42 1
-20V, -3A, P-CHANNEL, Power MOSFET, Automotive, RoHS, Halogen Free, SOT-23
Type: P
Vds(V): -20
Vgs(V): ±12
Id(A): -3
Rds(on) mΩ (max) @Vgs=4.5V: 56
Rds(on) mΩ (typ) @Vgs=4,5V: 42
Pd(W): 1
Rds(on) mΩ (max) @Vgs=2.5V: 80
Rds(on) mΩ (typ) @Vgs=2,5V: 51
ESD Diode: NO
Vgs(th) max (V): -0.9
Qg(nC): 8.5
Qgs(nC): 1.2
Qgd(nC): 2.1
Ciss(pF): 640
Crss(pF): 60
Technology: TRENCH
2301H GOFORD SEMI SOT-23 P -30 ±20 -2.8 75 105 60 85 0.89
-30V, -2.8A, P-CHANNEL, Power MOSFET, RoHS, Halogen Free, SOT-23
Type: P
Vds(V): -30
Vgs(V): ±20
Id(A): -2.8
Rds(on) mΩ (max) @Vgs=10V: 75
Rds(on) mΩ (max) @Vgs=4.5V: 105
Rds(on) mΩ (typ) @Vgs=4,5V: 85
Rds(on) mΩ (typ) @Vgs=10V: 60
Pd(W): 0.89
ESD Diode: NO
Vgs(th) max (V): -2.4
Qg(nC): 4.5
Qgs(nC): 1.2
Qgd(nC): 2.4
Ciss(pF): 366
Crss(pF): 47
Technology: TRENCH
2301HA GOFORD SEMI SOT-23 P -30 ±20 -2.8 75 105 60 85 0.89
-30V, -2.8A, P-CHANNEL, Power MOSFET, Automotive, RoHS, Halogen Free, SOT-23
Type: P
Vds(V): -30
Vgs(V): ±20
Id(A): -2.8
Rds(on) mΩ (max) @Vgs=10V: 75
Rds(on) mΩ (max) @Vgs=4.5V: 105
Rds(on) mΩ (typ) @Vgs=4,5V: 85
Rds(on) mΩ (typ) @Vgs=10V: 60
Pd(W): 0.89
ESD Diode: NO
Vgs(th) max (V): -2.4
Qg(nC): 4.5
Qgs(nC): 1.2
Qgd(nC): 2.4
Ciss(pF): 366
Crss(pF): 47
Technology: TRENCH
2302 GOFORD SEMI SOT-23 N 20 ±10 4.5 24 20 1
20V, 4.5A, N-CHANNEL, Power MOSFET, RoHS, Halogen Free, SOT-23
Type: N
Vds(V): 20
Vgs(V): ±10
Id(A): 4.5
Rds(on) mΩ (max) @Vgs=4.5V: 24
Rds(on) mΩ (typ) @Vgs=4,5V: 20
Pd(W): 1
Rds(on) mΩ (max) @Vgs=2.5V: 30
Rds(on) mΩ (typ) @Vgs=2,5V: 25
ESD Diode: NO
Vgs(th) max (V): 1.1
Qg(nC): 12
Qgs(nC): 1
Qgd(nC): 2
Ciss(pF): 380
Crss(pF): 70
Technology: TRENCH
2302A GOFORD SEMI SOT-23 N 20 ±10 4.3 27 21 1
20V, 4.3A, N-CHANNEL, Power MOSFET, Automotive, RoHS, Halogen Free, SOT-23
Type: N
Vds(V): 20
Vgs(V): ±10
Id(A): 4.3
Rds(on) mΩ (max) @Vgs=4.5V: 27
Rds(on) mΩ (typ) @Vgs=4,5V: 21
Pd(W): 1
Rds(on) mΩ (max) @Vgs=2.5V: 44
Rds(on) mΩ (typ) @Vgs=2,5V: 28
ESD Diode: NO
Vgs(th) max (V): 1
Qg(nC): 4
Qgs(nC): 0.7
Qgd(nC): 1.2
Ciss(pF): 356
Crss(pF): 70
Technology: TRENCH
25P06 GOFORD SEMI TO-252 P -60 ±20 -32 40 31 50
-60V, -32A, P-CHANNEL, Power MOSFET, RoHS, Halogen Free, TO-252
Type: P
Vds(V): -60
Vgs(V): ±20
Id(A): -32
Rds(on) mΩ (max) @Vgs=10V: 40
Rds(on) mΩ (typ) @Vgs=10V: 31
Pd(W): 50
ESD Diode: NO
Vgs(th) max (V): -3
Qg(nC): 44
Qgs(nC): 9
Qgd(nC): 10
Ciss(pF): 2600
Crss(pF): 115
Technology: TRENCH
3400 GOFORD SEMI SOT-23 N 30 ±12 5.6 27 33 20 21 1.4
30V, 5.6A, N-CHANNEL, Power MOSFET, RoHS, Halogen Free, SOT-23
Type: N
Vds(V): 30
Vgs(V): ±12
Id(A): 5.6
Rds(on) mΩ (max) @Vgs=10V: 27
Rds(on) mΩ (max) @Vgs=4.5V: 33
Rds(on) mΩ (typ) @Vgs=4,5V: 21
Rds(on) mΩ (typ) @Vgs=10V: 20
Pd(W): 1.4
Rds(on) mΩ (max) @Vgs=2.5V: 59
Rds(on) mΩ (typ) @Vgs=2,5V: 26
ESD Diode: NO
Vgs(th) max (V): 1.4
Qg(nC): 9.9
Qgs(nC): 1.7
Qgd(nC): 2.2
Ciss(pF): 600
Crss(pF): 53
Technology: TRENCH
3400L GOFORD SEMI SOT-23-3 N 30 ±12 5.6 27 33 20 21 1.4
30V, 5.6A, N-CHANNEL, Power MOSFET, RoHS, Halogen Free, SOT-23-3
Type: N
Vds(V): 30
Vgs(V): ±12
Id(A): 5.6
Rds(on) mΩ (max) @Vgs=10V: 27
Rds(on) mΩ (max) @Vgs=4.5V: 33
Rds(on) mΩ (typ) @Vgs=4,5V: 21
Rds(on) mΩ (typ) @Vgs=10V: 20
Pd(W): 1.4
Rds(on) mΩ (max) @Vgs=2.5V: 59
Rds(on) mΩ (typ) @Vgs=2,5V: 26
ESD Diode: NO
Vgs(th) max (V): 1.4
Qg(nC): 9.5
Qgs(nC): 1.7
Qgd(nC): 2.2
Ciss(pF): 600
Crss(pF): 53
Technology: TRENCH
3401 GOFORD SEMI SOT-23 P -30 ±12 -4.2 55 65 40 48 1.2
-30V, -4.2A, P-CHANNEL, Power MOSFET, RoHS, Halogen Free, SOT-23
Type: P
Vds(V): -30
Vgs(V): ±12
Id(A): -4.2
Rds(on) mΩ (max) @Vgs=10V: 55
Rds(on) mΩ (max) @Vgs=4.5V: 65
Rds(on) mΩ (typ) @Vgs=4,5V: 48
Rds(on) mΩ (typ) @Vgs=10V: 40
Pd(W): 1.2
Rds(on) mΩ (max) @Vgs=2.5V: 90
Rds(on) mΩ (typ) @Vgs=2,5V: 65
ESD Diode: NO
Vgs(th) max (V): -1.3
Qg(nC): 8.5
Qgs(nC): 1.8
Qgd(nC): 2.7
Ciss(pF): 670
Crss(pF): 63
Technology: TRENCH
3415A GOFORD SEMI SOT-23 P -20 ±10 -4 35 28 1.4
-20V, -4A, P-CHANNEL, Power MOSFET, RoHS, Halogen Free, SOT-23
Type: P
Vds(V): -20
Vgs(V): ±10
Id(A): -4
Rds(on) mΩ (max) @Vgs=4.5V: 35
Rds(on) mΩ (typ) @Vgs=4,5V: 28
Pd(W): 1.4
Rds(on) mΩ (max) @Vgs=2.5V: 45
Rds(on) mΩ (typ) @Vgs=2,5V: 36
ESD Diode: YES
Vgs(th) max (V): -1.1
Qg(nC): 10
Qgs(nC): 1.3
Qgd(nC): 2.4
Ciss(pF): 1106
Crss(pF): 122
Technology: TRENCH
4402 GOFORD SEMI SOP-8 N 20 ±10 30 16 6.8 2.5
20V, 30A, N-CHANNEL, Power MOSFET, RoHS, Halogen Free, SOP-8
Type: N
Vds(V): 20
Vgs(V): ±10
Id(A): 30
Rds(on) mΩ (max) @Vgs=4.5V: 16
Rds(on) mΩ (typ) @Vgs=4,5V: 6.8
Pd(W): 2.5
Rds(on) mΩ (max) @Vgs=2.5V: 25
Rds(on) mΩ (typ) @Vgs=2,5V: 8
ESD Diode: NO
Vgs(th) max (V): 1
Qg(nC): 17.5
Qgs(nC): 3
Qgd(nC): 4.1
Ciss(pF): 938
Crss(pF): 99
Technology: TRENCH
4435 GOFORD SEMI SOP-8 P -30 ±20 -11 20 33 12 18 2.5
-30V, -11A, P-CHANNEL, Power MOSFET, RoHS, Halogen Free, SOP-8
Type: P
Vds(V): -30
Vgs(V): ±20
Id(A): -11
Rds(on) mΩ (max) @Vgs=10V: 20
Rds(on) mΩ (max) @Vgs=4.5V: 33
Rds(on) mΩ (typ) @Vgs=4,5V: 18
Rds(on) mΩ (typ) @Vgs=10V: 12
Pd(W): 2.5
ESD Diode: NO
Vgs(th) max (V): -2.5
Qg(nC): 40
Qgs(nC): 5
Qgd(nC): 7.5
Ciss(pF): 1818
Crss(pF): 203
Technology: TRENCH
45P40 GOFORD SEMI TO-252 P -40 ±20 -45 14 20 8 11.5 80
-40V, -45A, P-CHANNEL, Power MOSFET, RoHS, Halogen Free, TO-252
Type: P
Vds(V): -40
Vgs(V): ±20
Id(A): -45
Rds(on) mΩ (max) @Vgs=10V: 14
Rds(on) mΩ (max) @Vgs=4.5V: 20
Rds(on) mΩ (typ) @Vgs=4,5V: 11.5
Rds(on) mΩ (typ) @Vgs=10V: 8
Pd(W): 80
ESD Diode: NO
Vgs(th) max (V): -2.5
Qg(nC): 60
Qgs(nC): 10
Qgd(nC): 12
Ciss(pF): 3300
Crss(pF): 290
Technology: TRENCH
45P40A GOFORD SEMI TO-252 P -40 ±20 -50 13 18 10 14 96
-40V, -50A, P-CHANNEL, Power MOSFET, Automotive, RoHS, Halogen Free, TO-252
Type: P
Vds(V): -40
Vgs(V): ±20
Id(A): -50
Rds(on) mΩ (max) @Vgs=10V: 13
Rds(on) mΩ (max) @Vgs=4.5V: 18
Rds(on) mΩ (typ) @Vgs=4,5V: 14
Rds(on) mΩ (typ) @Vgs=10V: 10
Pd(W): 96
ESD Diode: NO
Vgs(th) max (V): -2.5
Qg(nC): 73
Qgs(nC): 10
Qgd(nC): 18
Ciss(pF): 3300
Crss(pF): 280
Technology: TRENCH
5N20A GOFORD SEMI TO-252 N 200 ±20 5 580 420 78
200V, 5A, N-CHANNEL, Power MOSFET, RoHS, Halogen Free, TO-252
Type: N
Vds(V): 200
Vgs(V): ±20
Id(A): 5
Rds(on) mΩ (max) @Vgs=10V: 580
Rds(on) mΩ (typ) @Vgs=10V: 420
Pd(W): 78
ESD Diode: NO
Vgs(th) max (V): 3
Qg(nC): 11
Qgs(nC): 2
Qgd(nC): 3
Ciss(pF): 247
Crss(pF): 7
Technology: PLANAR
5P40 GOFORD SEMI SOT-23-3 P -40 ±20 -5 85 150 57 77 2
-40V, -5A, P-CHANNEL, Power MOSFET, RoHS, Halogen Free, SOT-23-3
Type: P
Vds(V): -40
Vgs(V): ±20
Id(A): -5
Rds(on) mΩ (max) @Vgs=10V: 85
Rds(on) mΩ (max) @Vgs=4.5V: 150
Rds(on) mΩ (typ) @Vgs=4,5V: 77
Rds(on) mΩ (typ) @Vgs=10V: 57
Pd(W): 2
ESD Diode: NO
Vgs(th) max (V): -3
Qg(nC): 14
Qgs(nC): 3
Qgd(nC): 3.8
Ciss(pF): 600
Crss(pF): 70
Technology: TRENCH
5P40A GOFORD SEMI SOT-23-3 P -40 ±20 -5.5 85 150 57 77 2.4
-40V, -5.5A, P-CHANNEL, Power MOSFET, Automotive, RoHS, Halogen Free, SOT-23-3
Type: P
Vds(V): -40
Vgs(V): ±20
Id(A): -5.5
Rds(on) mΩ (max) @Vgs=10V: 85
Rds(on) mΩ (max) @Vgs=4.5V: 150
Rds(on) mΩ (typ) @Vgs=4,5V: 77
Rds(on) mΩ (typ) @Vgs=10V: 57
Pd(W): 2.4
ESD Diode: NO
Vgs(th) max (V): -3
Qg(nC): 14
Qgs(nC): 3
Qgd(nC): 3.8
Ciss(pF): 600
Crss(pF): 70
Technology: TRENCH
60N06 GOFORD SEMI TO-252 N 60 ±20 50 17 21 14 15 69
60V, 50A, N-CHANNEL, Power MOSFET, RoHS, Halogen Free, TO-252
Type: N
Vds(V): 60
Vgs(V): ±20
Id(A): 50
Rds(on) mΩ (max) @Vgs=10V: 17
Rds(on) mΩ (max) @Vgs=4.5V: 21
Rds(on) mΩ (typ) @Vgs=4,5V: 15
Rds(on) mΩ (typ) @Vgs=10V: 14
Pd(W): 69
ESD Diode: NO
Vgs(th) max (V): 2
Qg(nC): 50
Qgs(nC): 6
Qgd(nC): 15
Ciss(pF): 2315
Crss(pF): 101
Technology: TRENCH
60N06A GOFORD SEMI TO-252 N 60 ±20 50 17 21 14 15 69
60V, 50A, N-CHANNEL, Power MOSFET, Automotive, RoHS, Halogen Free, TO-252
Type: N
Vds(V): 60
Vgs(V): ±20
Id(A): 50
Rds(on) mΩ (max) @Vgs=10V: 17
Rds(on) mΩ (max) @Vgs=4.5V: 21
Rds(on) mΩ (typ) @Vgs=4,5V: 15
Rds(on) mΩ (typ) @Vgs=10V: 14
Pd(W): 69
ESD Diode: NO
Vgs(th) max (V): 2
Qg(nC): 50
Qgs(nC): 6
Qgd(nC): 15
Ciss(pF): 2315
Crss(pF): 101
Technology: TRENCH
630A GOFORD SEMI TO-252 N 200 ±20 11 250 300 210 230 83
200V, 11A, N-CHANNEL, Power MOSFET, RoHS, Halogen Free, TO-252
Type: N
Vds(V): 200
Vgs(V): ±20
Id(A): 11
Rds(on) mΩ (max) @Vgs=10V: 250
Rds(on) mΩ (max) @Vgs=4.5V: 300
Rds(on) mΩ (typ) @Vgs=4,5V: 230
Rds(on) mΩ (typ) @Vgs=10V: 210
Pd(W): 83
ESD Diode: NO
Vgs(th) max (V): 2
Qg(nC): 12
Qgs(nC): 2
Qgd(nC): 4
Ciss(pF): 510
Crss(pF): 11
Technology: PLANAR
630AT GOFORD SEMI TO-220 N 200 ±20 11 250 300 209 227 83
200V, 11A, N-CHANNEL, Power MOSFET, RoHS, Halogen Free, TO-220
Type: N
Vds(V): 200
Vgs(V): ±20
Id(A): 11
Rds(on) mΩ (max) @Vgs=10V: 250
Rds(on) mΩ (max) @Vgs=4.5V: 300
Rds(on) mΩ (typ) @Vgs=4,5V: 227
Rds(on) mΩ (typ) @Vgs=10V: 209
Pd(W): 83
ESD Diode: NO
Vgs(th) max (V): 3
Qg(nC): 12
Qgs(nC): 2
Qgd(nC): 4
Ciss(pF): 503
Crss(pF): 13
Technology: PLANAR
6703 GOFORD SEMI SOT-23-6L DUAL N+P 20/-20 ±12 2,9/-3 45/110 30/80 1.1
20/-20V, 2.9/-3A, N+P-CHANNEL, Power MOSFET, RoHS, Halogen Free, SOT-23-6L DUAL
Type: N+P
Vds(V): 20/-20
Vgs(V): ±12
Id(A): 2,9/-3
Rds(on) mΩ (max) @Vgs=4.5V: 45/110
Rds(on) mΩ (typ) @Vgs=4,5V: 30/80
Pd(W): 1.1
Rds(on) mΩ (max) @Vgs=2.5V: 59/140
Rds(on) mΩ (typ) @Vgs=2,5V: 37/110
ESD Diode: NO
Vgs(th) max (V): 1,2/-1
Qg(nC): 4/3,3
Qgs(nC): 0,65/0,7
Qgd(nC): 1,2/1,3
Ciss(pF): 300/405
Crss(pF): 80/55
Technology: TRENCH
6703A GOFORD SEMI SOT-23-6L DUAL N+P 20/-20 ±12 2,9/-3 45/110 30/80 1.1
20/-20V, 2.9/-3A, N+P-CHANNEL, Power MOSFET, Automotive, RoHS, Halogen Free, SOT-23-6L DUAL
Type: N+P
Vds(V): 20/-20
Vgs(V): ±12
Id(A): 2,9/-3
Rds(on) mΩ (max) @Vgs=4.5V: 45/110
Rds(on) mΩ (typ) @Vgs=4,5V: 30/80
Pd(W): 1.1
Rds(on) mΩ (max) @Vgs=2.5V: 59/140
Rds(on) mΩ (typ) @Vgs=2,5V: 37/110
ESD Diode: NO
Vgs(th) max (V): 1,2/-1
Qg(nC): 4/3,3
Qgs(nC): 0,65/0,7
Qgd(nC): 1,2/1,3
Ciss(pF): 300/405
Crss(pF): 80/55
Technology: TRENCH
6706A GOFORD SEMI SOP-8 DUAL N+P 30/-30 ±20 6,5/-5 20/45 30/70 16/37 24/57 2/2
30/-30V, 6.5/-5A, N+P-CHANNEL, Power MOSFET, RoHS, Halogen Free, SOP-8 DUAL
Type: N+P
Vds(V): 30/-30
Vgs(V): ±20
Id(A): 6,5/-5
Rds(on) mΩ (max) @Vgs=10V: 20/45
Rds(on) mΩ (max) @Vgs=4.5V: 30/70
Rds(on) mΩ (typ) @Vgs=4,5V: 24/57
Rds(on) mΩ (typ) @Vgs=10V: 16/37
Pd(W): 2/2
ESD Diode: NO
Vgs(th) max (V): 2/-2,0
Qg(nC): 14,8/11
Qgs(nC): 2,6/2
Qgd(nC): 2,9/2,6
Ciss(pF): 479/608
Crss(pF): 59/68
Technology: TRENCH
6706AA GOFORD SEMI SOP-8 DUAL N+P 30/-30 ±20 6,5/-5 20/45 30/70 16/37 24/57 2/2
30/-30V, 6.5/-5A, N+P-CHANNEL, Power MOSFET, Automotive, RoHS, Halogen Free, SOP-8 DUAL
Type: N+P
Vds(V): 30/-30
Vgs(V): ±20
Id(A): 6,5/-5
Rds(on) mΩ (max) @Vgs=10V: 20/45
Rds(on) mΩ (max) @Vgs=4.5V: 30/70
Rds(on) mΩ (typ) @Vgs=4,5V: 24/57
Rds(on) mΩ (typ) @Vgs=10V: 16/37
Pd(W): 2/2
ESD Diode: NO
Vgs(th) max (V): 2/-2,0
Qg(nC): 14,8/11
Qgs(nC): 2,6/2
Qgd(nC): 2,9/2,6
Ciss(pF): 479/608
Crss(pF): 59/68
Technology: TRENCH
9926 GOFORD SEMI SOP-8 DUAL N+N 20 ±10 6 25 16 1.25
20V, 6A, N+N-CHANNEL, Power MOSFET, RoHS, Halogen Free, SOP-8 DUAL
Type: N+N
Vds(V): 20
Vgs(V): ±10
Id(A): 6
Rds(on) mΩ (max) @Vgs=4.5V: 25
Rds(on) mΩ (typ) @Vgs=4,5V: 16
Pd(W): 1.25
Rds(on) mΩ (max) @Vgs=2.5V: 30
Rds(on) mΩ (typ) @Vgs=2,5V: 20
ESD Diode: NO
Vgs(th) max (V): 1.2
Qg(nC): 10
Qgs(nC): 1.5
Qgd(nC): 1.6
Ciss(pF): 640
Crss(pF): 80
Technology: TRENCH
G01N20LE GOFORD SEMI SOT-23-3 N 200 ±20 1.7 700 720 570 585 1.5
200V, 1.7A, N-CHANNEL, Power MOSFET, RoHS, Halogen Free, SOT-23-3
Type: N
Vds(V): 200
Vgs(V): ±20
Id(A): 1.7
Rds(on) mΩ (max) @Vgs=10V: 700
Rds(on) mΩ (max) @Vgs=4.5V: 720
Rds(on) mΩ (typ) @Vgs=4,5V: 585
Rds(on) mΩ (typ) @Vgs=10V: 570
Pd(W): 1.5
ESD Diode: YES
Vgs(th) max (V): 2.5
Qg(nC): 12
Qgs(nC): 2.5
Qgd(nC): 3.8
Ciss(pF): 530
Crss(pF): 11
Technology: TRENCH
G01N20RE GOFORD SEMI TO-92 N 200 ±20 1.7 700 720 550 560 3
200V, 1.7A, N-CHANNEL, Power MOSFET, RoHS, Halogen Free, TO-92
Type: N
Vds(V): 200
Vgs(V): ±20
Id(A): 1.7
Rds(on) mΩ (max) @Vgs=10V: 700
Rds(on) mΩ (max) @Vgs=4.5V: 720
Rds(on) mΩ (typ) @Vgs=4,5V: 560
Rds(on) mΩ (typ) @Vgs=10V: 550
Pd(W): 3
ESD Diode: YES
Vgs(th) max (V): 2.5
Qg(nC): 12
Qgs(nC): 2.5
Qgd(nC): 4
Ciss(pF): 566
Crss(pF): 10
Technology: TRENCH
G020N03D5 GOFORD SEMI DFN5*6-8L N 30 ±20 140 2 3 1.5 2.1 83
30V, 140A, N-CHANNEL, Power MOSFET, RoHS, Halogen Free, DFN5*6-8L
Type: N
Vds(V): 30
Vgs(V): ±20
Id(A): 140
Rds(on) mΩ (max) @Vgs=10V: 2
Rds(on) mΩ (max) @Vgs=4.5V: 3
Rds(on) mΩ (typ) @Vgs=4,5V: 2.1
Rds(on) mΩ (typ) @Vgs=10V: 1.5
Pd(W): 83
ESD Diode: NO
Vgs(th) max (V): 2
Qg(nC): 110
Qgs(nC): 14
Qgd(nC): 26
Ciss(pF): 5497
Crss(pF): 899
Technology: TRENCH
G020N03K GOFORD SEMI TO-252 N 30 ±20 140 2.3 3.5 1.8 2.5 83
30V, 140A, N-CHANNEL, Power MOSFET, RoHS, Halogen Free, TO-252
Type: N
Vds(V): 30
Vgs(V): ±20
Id(A): 140
Rds(on) mΩ (max) @Vgs=10V: 2.3
Rds(on) mΩ (max) @Vgs=4.5V: 3.5
Rds(on) mΩ (typ) @Vgs=4,5V: 2.5
Rds(on) mΩ (typ) @Vgs=10V: 1.8
Pd(W): 83
ESD Diode: NO
Vgs(th) max (V): 2
Qg(nC): 110
Qgs(nC): 14
Qgd(nC): 26
Ciss(pF): 5655
Crss(pF): 851
Technology: TRENCH
G020N03T GOFORD SEMI TO-220 N 30 ±20 168 2.3 3.5 1.9 2.8 140
30V, 168A, N-CHANNEL, Power MOSFET, RoHS, Halogen Free, TO-220
Type: N
Vds(V): 30
Vgs(V): ±20
Id(A): 168
Rds(on) mΩ (max) @Vgs=10V: 2.3
Rds(on) mΩ (max) @Vgs=4.5V: 3.5
Rds(on) mΩ (typ) @Vgs=4,5V: 2.8
Rds(on) mΩ (typ) @Vgs=10V: 1.9
Pd(W): 140
ESD Diode: NO
Vgs(th) max (V): 2
Qg(nC): 110
Qgs(nC): 14
Qgd(nC): 26
Ciss(pF): 6005
Crss(pF): 964
Technology: TRENCH
G020P04TA GOFORD SEMI TO-220 P -40 ±20 -360 2.2 3.8 1.9 2.5 356
-40V, -360A, P-CHANNEL, Power MOSFET, Automotive, RoHS, Halogen Free, TO-220
Type: P
Vds(V): -40
Vgs(V): ±20
Id(A): -360
Rds(on) mΩ (max) @Vgs=10V: 2.2
Rds(on) mΩ (max) @Vgs=4.5V: 3.8
Rds(on) mΩ (typ) @Vgs=4,5V: 2.5
Rds(on) mΩ (typ) @Vgs=10V: 1.9
Pd(W): 356
ESD Diode: NO
Vgs(th) max (V): -2.5
Qg(nC): 412
Qgs(nC): 82
Qgd(nC): 52
Ciss(pF): 28041
Crss(pF): 2454
Technology: TRENCH
G020P04TL GOFORD SEMI TOLL-8L P -40 ±20 -380 1.5 2.1 1.3 1.8 370
-40V, -380A, P-CHANNEL, Power MOSFET, RoHS, Halogen Free, TOLL-8L
Type: P
Vds(V): -40
Vgs(V): ±20
Id(A): -380
Rds(on) mΩ (max) @Vgs=10V: 1.5
Rds(on) mΩ (max) @Vgs=4.5V: 2.1
Rds(on) mΩ (typ) @Vgs=4,5V: 1.8
Rds(on) mΩ (typ) @Vgs=10V: 1.3
Pd(W): 370
ESD Diode: NO
Vgs(th) max (V): -2.5
Qg(nC): 824
Qgs(nC): 164
Qgd(nC): 104
Ciss(pF): 24000
Crss(pF): 2800
Technology: TRENCH
G025N03T GOFORD SEMI TO-220 N 30 ±20 160 2.8 3.8 2.3 3.1 130
30V, 160A, N-CHANNEL, Power MOSFET, RoHs, Halogen Free, TO-220
Type: N
Vds(V): 30
Vgs(V): ±20
Id(A): 160
Rds(on) mΩ (max) @Vgs=10V: 2.8
Rds(on) mΩ (max) @Vgs=4.5V: 3.8
Rds(on) mΩ (typ) @Vgs=4,5V: 3.1
Rds(on) mΩ (typ) @Vgs=10V: 2.3
Pd(W): 130
ESD Diode: NO
Vgs(th) max (V): 2
Qg(nC): 89
Qgs(nC): 14
Qgd(nC): 20
Ciss(pF): 4223
Crss(pF): 667
Technology: TRENCH
G02P06 GOFORD SEMI SOT-23 P -60 ±20 -1.6 190 230 150 180 1.5
-60V, -1.6A, P-CHANNEL, Power MOSFET, RoHS, Halogen Free, SOT-23
Type: P
Vds(V): -60
Vgs(V): ±20
Id(A): -1.6
Rds(on) mΩ (max) @Vgs=10V: 190
Rds(on) mΩ (max) @Vgs=4.5V: 230
Rds(on) mΩ (typ) @Vgs=4,5V: 180
Rds(on) mΩ (typ) @Vgs=10V: 150
Pd(W): 1.5
ESD Diode: NO
Vgs(th) max (V): -2.5
Qg(nC): 11.3
Qgs(nC): 2.7
Qgd(nC): 1.6
Ciss(pF): 566
Crss(pF): 23
Technology: TRENCH
G02P06A GOFORD SEMI SOT-23 P -60 ±20 -1.6 190 230 150 180 1.5
-60V, -1.6A, P-CHANNEL, Power MOSFET, Automotive, RoHS, Halogen Free, SOT-23
Type: P
Vds(V): -60
Vgs(V): ±20
Id(A): -1.6
Rds(on) mΩ (max) @Vgs=10V: 190
Rds(on) mΩ (max) @Vgs=4.5V: 230
Rds(on) mΩ (typ) @Vgs=4,5V: 180
Rds(on) mΩ (typ) @Vgs=10V: 150
Pd(W): 1.5
ESD Diode: NO
Vgs(th) max (V): -2.5
Qg(nC): 11.3
Qgs(nC): 2.7
Qgd(nC): 1.6
Ciss(pF): 566
Crss(pF): 23
Technology: TRENCH
G030N06M GOFORD SEMI TO-263 N 60 ±20 223 3 3.8 2.4 3 240
60V, 223A, N-CHANNEL, Power MOSFET, RoHS, Halogen Free, TO-263
Type: N
Vds(V): 60
Vgs(V): ±20
Id(A): 223
Rds(on) mΩ (max) @Vgs=10V: 3
Rds(on) mΩ (max) @Vgs=4.5V: 3.8
Rds(on) mΩ (typ) @Vgs=4,5V: 3
Rds(on) mΩ (typ) @Vgs=10V: 2.4
Pd(W): 240
ESD Diode: NO
Vgs(th) max (V): 2.5
Qg(nC): 101
Qgs(nC): 34
Qgd(nC): 57
Ciss(pF): 12432
Crss(pF): 752
Technology: TRENCH
G030N06T GOFORD SEMI TO-220 N 60 ±20 223 2.7 3.5 2.2 2.8 240
60V, 223A, N-CHANNEL, Power MOSFET, RoHS, Halogen Free, TO-220
Type: N
Vds(V): 60
Vgs(V): ±20
Id(A): 223
Rds(on) mΩ (max) @Vgs=10V: 2.7
Rds(on) mΩ (max) @Vgs=4.5V: 3.5
Rds(on) mΩ (typ) @Vgs=4,5V: 2.8
Rds(on) mΩ (typ) @Vgs=10V: 2.2
Pd(W): 240
ESD Diode: NO
Vgs(th) max (V): 2.5
Qg(nC): 113
Qgs(nC): 34
Qgd(nC): 48
Ciss(pF): 12000
Crss(pF): 750
Technology: TRENCH
G030P04T GOFORD SEMI TO-220 P -40 ±20 -185 3 3.8 2.6 3.2 183
-40V, -185A, P-CHANNEL, Power MOSFET, RoHS, Halogen Free, TO-220
Type: P
Vds(V): -40
Vgs(V): ±20
Id(A): -185
Rds(on) mΩ (max) @Vgs=10V: 3
Rds(on) mΩ (max) @Vgs=4.5V: 3.8
Rds(on) mΩ (typ) @Vgs=4,5V: 3.2
Rds(on) mΩ (typ) @Vgs=10V: 2.6
Pd(W): 183
ESD Diode: NO
Vgs(th) max (V): -2.5
Qg(nC): 206
Qgs(nC): 41
Qgd(nC): 26
Ciss(pF): 12200
Crss(pF): 1400
Technology: TRENCH
G030P04TA GOFORD SEMI TO-220 P -40 ±20 -185 3 3.8 2.6 3.2 183
-40V, -185A, P-CHANNEL, Power MOSFET, Automotive, RoHS, Halogen Free, TO-220
Type: P
Vds(V): -40
Vgs(V): ±20
Id(A): -185
Rds(on) mΩ (max) @Vgs=10V: 3
Rds(on) mΩ (max) @Vgs=4.5V: 3.8
Rds(on) mΩ (typ) @Vgs=4,5V: 3.2
Rds(on) mΩ (typ) @Vgs=10V: 2.6
Pd(W): 183
ESD Diode: NO
Vgs(th) max (V): -2.5
Qg(nC): 206
Qgs(nC): 41
Qgd(nC): 26
Ciss(pF): 12200
Crss(pF): 1400
Technology: TRENCH
G040P02D5 GOFORD SEMI DFN5*6-8L P -20 ±12 -90 4.5 3.5 125
-20V, -90A, P-CHANNEL, Power MOSFET, RoHS, Halogen Free, DFN5*6-8L
Type: P
Vds(V): -20
Vgs(V): ±12
Id(A): -90
Rds(on) mΩ (max) @Vgs=4.5V: 4.5
Rds(on) mΩ (typ) @Vgs=4,5V: 3.5
Pd(W): 125
Rds(on) mΩ (max) @Vgs=2.5V: 5.5
Rds(on) mΩ (typ) @Vgs=2,5V: 4.4
ESD Diode: NO
Vgs(th) max (V): -1
Qg(nC): 134
Qgs(nC): 32
Qgd(nC): 15
Ciss(pF): 8998
Crss(pF): 1181
Technology: TRENCH
G040P02K GOFORD SEMI TO-252 P -20 ±12 -90 5 3.4 125
-20V, -90A, P-CHANNEL, Power MOSFET, RoHS, Halogen Free, TO-252
Type: P
Vds(V): -20
Vgs(V): ±12
Id(A): -90
Rds(on) mΩ (max) @Vgs=4.5V: 5
Rds(on) mΩ (typ) @Vgs=4,5V: 3.4
Pd(W): 125
Rds(on) mΩ (max) @Vgs=2.5V: 6
Rds(on) mΩ (typ) @Vgs=2,5V: 4.3
ESD Diode: NO
Vgs(th) max (V): -1
Qg(nC): 134
Qgs(nC): 32
Qgd(nC): 15
Ciss(pF): 9245
Crss(pF): 1183
Technology: TRENCH
G040P02T GOFORD SEMI TO-220 P -20 ±12 -90 5 3.5 125
-20V, -90A, P-CHANNEL, Power MOSFET, RoHS, Halogen Free, TO-220
Type: P
Vds(V): -20
Vgs(V): ±12
Id(A): -90
Rds(on) mΩ (max) @Vgs=4.5V: 5
Rds(on) mΩ (typ) @Vgs=4,5V: 3.5
Pd(W): 125
Rds(on) mΩ (max) @Vgs=2.5V: 6
Rds(on) mΩ (typ) @Vgs=2,5V: 4.3
ESD Diode: NO
Vgs(th) max (V): -1
Qg(nC): 134
Qgs(nC): 32
Qgd(nC): 15
Ciss(pF): 9457
Crss(pF): 1197
Technology: TRENCH
G040P04M GOFORD SEMI TO-263 P -40 ±20 -180 3.5 4.5 2.9 3.7 178
-40V, -180A, P-CHANNEL, Power MOSFET, RoHS, Halogen Free, TO-263
Type: P
Vds(V): -40
Vgs(V): ±20
Id(A): -180
Rds(on) mΩ (max) @Vgs=10V: 3.5
Rds(on) mΩ (max) @Vgs=4.5V: 4.5
Rds(on) mΩ (typ) @Vgs=4,5V: 3.7
Rds(on) mΩ (typ) @Vgs=10V: 2.9
Pd(W): 178
ESD Diode: NO
Vgs(th) max (V): -2.5
Qg(nC): 206
Qgs(nC): 41
Qgd(nC): 26
Ciss(pF): 14983
Crss(pF): 1391
Technology: TRENCH
G040P04MA GOFORD SEMI TO-263 P -40 ±20 -180 3.5 4.5 2.9 3.7 178
-40V, -180A, P-CHANNEL, Power MOSFET, Automotive, RoHS, Halogen Free, TO-263
Type: P
Vds(V): -40
Vgs(V): ±20
Id(A): -180
Rds(on) mΩ (max) @Vgs=10V: 3.5
Rds(on) mΩ (max) @Vgs=4.5V: 4.5
Rds(on) mΩ (typ) @Vgs=4,5V: 3.7
Rds(on) mΩ (typ) @Vgs=10V: 2.9
Pd(W): 178
ESD Diode: NO
Vgs(th) max (V): -2.5
Qg(nC): 206
Qgs(nC): 41
Qgd(nC): 26
Ciss(pF): 14983
Crss(pF): 1391
Technology: TRENCH
G040P04T GOFORD SEMI TO-220 P -40 ±20 -180 3.7 5 2.9 3.7 178
-40V, -180A, P-CHANNEL, Power MOSFET, RoHS, Halogen Free, TO-220
Type: P
Vds(V): -40
Vgs(V): ±20
Id(A): -180
Rds(on) mΩ (max) @Vgs=10V: 3.7
Rds(on) mΩ (max) @Vgs=4.5V: 5
Rds(on) mΩ (typ) @Vgs=4,5V: 3.7
Rds(on) mΩ (typ) @Vgs=10V: 2.9
Pd(W): 178
ESD Diode: NO
Vgs(th) max (V): -2.5
Qg(nC): 206
Qgs(nC): 41
Qgd(nC): 26
Ciss(pF): 15087
Crss(pF): 1401
Technology: TRENCH
G048N04MA GOFORD SEMI TO-263 N 40 ±20 150 3.3 4.5 2.6 3.6 130
40V, 150A, N-CHANNEL, Power MOSFET, Automotive, RoHS, Halogen Free, TO-263
Type: N
Vds(V): 40
Vgs(V): ±20
Id(A): 150
Rds(on) mΩ (max) @Vgs=10V: 3.3
Rds(on) mΩ (max) @Vgs=4.5V: 4.5
Rds(on) mΩ (typ) @Vgs=4,5V: 3.6
Rds(on) mΩ (typ) @Vgs=10V: 2.6
Pd(W): 130
ESD Diode: NO
Vgs(th) max (V): 2.5
Qg(nC): 117
Qgs(nC): 18
Qgd(nC): 29
Ciss(pF): 6561
Crss(pF): 548
Technology: TRENCH
G048N04T GOFORD SEMI TO-220 N 40 ±20 150 3.3 4.5 2.6 3.6 130
40V, 150A, N-CHANNEL, Power MOSFET, RoHS, Halogen Free, TO-220
Type: N
Vds(V): 40
Vgs(V): ±20
Id(A): 150
Rds(on) mΩ (max) @Vgs=10V: 3.3
Rds(on) mΩ (max) @Vgs=4.5V: 4.5
Rds(on) mΩ (typ) @Vgs=4,5V: 3.6
Rds(on) mΩ (typ) @Vgs=10V: 2.6
Pd(W): 130
ESD Diode: NO
Vgs(th) max (V): 2.5
Qg(nC): 117
Qgs(nC): 18
Qgd(nC): 29
Ciss(pF): 6561
Crss(pF): 548
Technology: TRENCH
G048N04TA GOFORD SEMI TO-220 N 40 ±20 150 3.3 4.5 2.6 3.6 130
40V, 150A, N-CHANNEL, Power MOSFET, Automotive, RoHS, Halogen Free, TO-220
Type: N
Vds(V): 40
Vgs(V): ±20
Id(A): 150
Rds(on) mΩ (max) @Vgs=10V: 3.3
Rds(on) mΩ (max) @Vgs=4.5V: 4.5
Rds(on) mΩ (typ) @Vgs=4,5V: 3.6
Rds(on) mΩ (typ) @Vgs=10V: 2.6
Pd(W): 130
ESD Diode: NO
Vgs(th) max (V): 2.5
Qg(nC): 117
Qgs(nC): 18
Qgd(nC): 29
Ciss(pF): 6561
Crss(pF): 548
Technology: TRENCH
G04P10HE GOFORD SEMI SOT-223 P -100 ±20 -4 200 250 180 190 1.2
-100V, -4A, P-CHANNEL, Power MOSFET, RoHS, Halogen Free, SOT-223
Type: P
Vds(V): -100
Vgs(V): ±20
Id(A): -4
Rds(on) mΩ (max) @Vgs=10V: 200
Rds(on) mΩ (max) @Vgs=4.5V: 250
Rds(on) mΩ (typ) @Vgs=4,5V: 190
Rds(on) mΩ (typ) @Vgs=10V: 180
Pd(W): 1.2
ESD Diode: YES
Vgs(th) max (V): -2.8
Qg(nC): 32
Qgs(nC): 5
Qgd(nC): 7
Ciss(pF): 1700
Crss(pF): 45
Technology: TRENCH
G04P10HEA GOFORD SEMI SOT-223 P -100 ±20 -4 200 250 180 190 1.2
-100V, -4A, P-CHANNEL, Power MOSFET, Automotive, RoHS, Halogen Free, SOT-223
Type: P
Vds(V): -100
Vgs(V): ±20
Id(A): -4
Rds(on) mΩ (max) @Vgs=10V: 200
Rds(on) mΩ (max) @Vgs=4.5V: 250
Rds(on) mΩ (typ) @Vgs=4,5V: 190
Rds(on) mΩ (typ) @Vgs=10V: 180
Pd(W): 1.2
ESD Diode: YES
Vgs(th) max (V): -2.8
Qg(nC): 32
Qgs(nC): 5
Qgd(nC): 7
Ciss(pF): 1700
Crss(pF): 45
Technology: TRENCH
G050N03S GOFORD SEMI SOP-8 N 30 ±20 18 5 8.5 4 6.9 2.1
30V, 18A, N-CHANNEL, Power MOSFET, RoHS, Halogen Free, SOP-8
Type: N
Vds(V): 30
Vgs(V): ±20
Id(A): 18
Rds(on) mΩ (max) @Vgs=10V: 5
Rds(on) mΩ (max) @Vgs=4.5V: 8.5
Rds(on) mΩ (typ) @Vgs=4,5V: 6.9
Rds(on) mΩ (typ) @Vgs=10V: 4
Pd(W): 2.1
ESD Diode: NO
Vgs(th) max (V): 2.4
Qg(nC): 37
Qgs(nC): 4.8
Qgd(nC): 11
Ciss(pF): 1714
Crss(pF): 326
Technology: TRENCH
G050N06LL GOFORD SEMI SOT-23-6L N 60 ±20 5 45 50 30 35 1.25
60V, 5A, N-CHANNEL, Power MOSFET, RoHS, Halogen Free, SOT-23-6L
Type: N
Vds(V): 60
Vgs(V): ±20
Id(A): 5
Rds(on) mΩ (max) @Vgs=10V: 45
Rds(on) mΩ (max) @Vgs=4.5V: 50
Rds(on) mΩ (typ) @Vgs=4,5V: 35
Rds(on) mΩ (typ) @Vgs=10V: 30
Pd(W): 1.25
ESD Diode: NO
Vgs(th) max (V): 2.5
Qg(nC): 26.4
Qgs(nC): 5.4
Qgd(nC): 6.5
Ciss(pF): 1343
Crss(pF): 55
Technology: TRENCH
G050N06LLA GOFORD SEMI SOT-23-6L N 60 ±20 5 45 50 30 35 1.25
60V, 5A, N-CHANNEL, Power MOSFET, Automotive, RoHS, Halogen Free, SOT-23-6L
Type: N
Vds(V): 60
Vgs(V): ±20
Id(A): 5
Rds(on) mΩ (max) @Vgs=10V: 45
Rds(on) mΩ (max) @Vgs=4.5V: 50
Rds(on) mΩ (typ) @Vgs=4,5V: 35
Rds(on) mΩ (typ) @Vgs=10V: 30
Pd(W): 1.25
ESD Diode: NO
Vgs(th) max (V): 2.5
Qg(nC): 26.4
Qgs(nC): 5.4
Qgd(nC): 6.5
Ciss(pF): 1343
Crss(pF): 55
Technology: TRENCH
G050P03D5 GOFORD SEMI DFN5*6-8L P -30 ±20 -85 4 5.5 3 4 100
-30V, -85A, P-CHANNEL, Power MOSFET, RoHS, Halogen Free, DFN5*6-8L
Type: P
Vds(V): -30
Vgs(V): ±20
Id(A): -85
Rds(on) mΩ (max) @Vgs=10V: 4
Rds(on) mΩ (max) @Vgs=4.5V: 5.5
Rds(on) mΩ (typ) @Vgs=4,5V: 4
Rds(on) mΩ (typ) @Vgs=10V: 3
Pd(W): 100
ESD Diode: NO
Vgs(th) max (V): -2.5
Qg(nC): 111
Qgs(nC): 21
Qgd(nC): 23
Ciss(pF): 7670
Crss(pF): 968
Technology: TRENCH
G050P03K GOFORD SEMI TO-252 P -30 ±20 -85 4 5.5 3.2 4.3 100
-30V, -85A, P-CHANNEL, Power MOSFET, RoHS, Halogen Free, TO-252
Type: P
Vds(V): -30
Vgs(V): ±20
Id(A): -85
Rds(on) mΩ (max) @Vgs=10V: 4
Rds(on) mΩ (max) @Vgs=4.5V: 5.5
Rds(on) mΩ (typ) @Vgs=4,5V: 4.3
Rds(on) mΩ (typ) @Vgs=10V: 3.2
Pd(W): 100
ESD Diode: NO
Vgs(th) max (V): -2.5
Qg(nC): 111
Qgs(nC): 21
Qgd(nC): 23
Ciss(pF): 7533
Crss(pF): 1001
Technology: TRENCH
G050P03M GOFORD SEMI TO-263 P -30 ±20 -85 4.5 6 3.6 4.9 100
-30V, -85A, P-CHANNEL, Power MOSFET, RoHS, Halogen Free, TO-263
Type: P
Vds(V): -30
Vgs(V): ±20
Id(A): -85
Rds(on) mΩ (max) @Vgs=10V: 4.5
Rds(on) mΩ (max) @Vgs=4.5V: 6
Rds(on) mΩ (typ) @Vgs=4,5V: 4.9
Rds(on) mΩ (typ) @Vgs=10V: 3.6
Pd(W): 100
ESD Diode: NO
Vgs(th) max (V): -2.5
Qg(nC): 163
Qgs(nC): 24
Qgd(nC): 34
Ciss(pF): 7500
Crss(pF): 1000
Technology: TRENCH
G050P03S GOFORD SEMI SOP-8 P -30 ±20 -25 5.5 7 4.5 5.5 3.5
-30V, -25A, P-CHANNEL, Power MOSFET, RoHS, Halogen Free, SOP-8
Type: P
Vds(V): -30
Vgs(V): ±20
Id(A): -25
Rds(on) mΩ (max) @Vgs=10V: 5.5
Rds(on) mΩ (max) @Vgs=4.5V: 7
Rds(on) mΩ (typ) @Vgs=4,5V: 5.5
Rds(on) mΩ (typ) @Vgs=10V: 4.5
Pd(W): 3.5
ESD Diode: NO
Vgs(th) max (V): -2.5
Qg(nC): 111
Qgs(nC): 21
Qgd(nC): 23
Ciss(pF): 7221
Crss(pF): 576
Technology: TRENCH
G050P03T GOFORD SEMI TO-220 P -30 ±20 -85 5 6.5 4 5 100
-30V, -85A, P-CHANNEL, Power MOSFET, RoHS, Halogen Free, TO-220
Type: P
Vds(V): -30
Vgs(V): ±20
Id(A): -85
Rds(on) mΩ (max) @Vgs=10V: 5
Rds(on) mΩ (max) @Vgs=4.5V: 6.5
Rds(on) mΩ (typ) @Vgs=4,5V: 5
Rds(on) mΩ (typ) @Vgs=10V: 4
Pd(W): 100
ESD Diode: NO
Vgs(th) max (V): -2.5
Qg(nC): 111
Qgs(nC): 21
Qgd(nC): 23
Ciss(pF): 6922
Crss(pF): 923
Technology: TRENCH
G05N06S2 GOFORD SEMI SOP-8 DUAL N+N 60 ±20 5 35 40 28 31 3.1
60V, 5A, N+N-CHANNEL, Power MOSFET, RoHS, Halogen Free, SOP-8 DUAL
Type: N+N
Vds(V): 60
Vgs(V): ±20
Id(A): 5
Rds(on) mΩ (max) @Vgs=10V: 35
Rds(on) mΩ (max) @Vgs=4.5V: 40
Rds(on) mΩ (typ) @Vgs=4,5V: 31
Rds(on) mΩ (typ) @Vgs=10V: 28
Pd(W): 3.1
ESD Diode: NO
Vgs(th) max (V): 2.5
Qg(nC): 26
Qgs(nC): 5.4
Qgd(nC): 6.5
Ciss(pF): 1374
Crss(pF): 50
Technology: TRENCH
G05NP04S GOFORD SEMI SOP-8 DUAL N+P 40/-40 ±20 4,5/-10 41/37 68/54 27,5/26 35/28 2
40/-40V, 4.5/-10A, N+P-CHANNEL, Power MOSFET, RoHS, Halogen Free, SOP-8 DUAL
Type: N+P
Vds(V): 40/-40
Vgs(V): ±20
Id(A): 4,5/-10
Rds(on) mΩ (max) @Vgs=10V: 41/37
Rds(on) mΩ (max) @Vgs=4.5V: 68/54
Rds(on) mΩ (typ) @Vgs=4,5V: 35/28
Rds(on) mΩ (typ) @Vgs=10V: 27,5/26
Pd(W): 2
ESD Diode: NO
Vgs(th) max (V): 2,5/-2,5
Qg(nC): 8,9/13
Qgs(nC): 2,4/3,8
Qgd(nC): 1,4/3,1
Ciss(pF): 516/520
Crss(pF): 43/65
Technology: TRENCH
G05NP06S2 GOFORD SEMI SOP-8 DUAL N+P 60/-60 ±20 5/-3,1 36/80 40/95 28/62 31/72 2,5/1,9
60/-60V, 5/-3.1A, N+P-CHANNEL, Power MOSFET, RoHS, Halogen Free, SOP-8 DUAL
Type: N+P
Vds(V): 60/-60
Vgs(V): ±20
Id(A): 5/-3,1
Rds(on) mΩ (max) @Vgs=10V: 36/80
Rds(on) mΩ (max) @Vgs=4.5V: 40/95
Rds(on) mΩ (typ) @Vgs=4,5V: 31/72
Rds(on) mΩ (typ) @Vgs=10V: 28/62
Pd(W): 2,5/1,9
ESD Diode: NO
Vgs(th) max (V): 2/-2,2
Qg(nC): 22/37
Qgs(nC): 3,3/4,5
Qgd(nC): 5,2/10,5
Ciss(pF): 1336/1454
Crss(pF): 52/58
Technology: TRENCH
G05NP10S GOFORD SEMI SOP-8 DUAL N+P 100/-100 ±20 12/-3,5 90/200 100/220 70/170 77/182 4,5/3,1
100/-100V, 12/-3.5A, N+P-CHANNEL, Power MOSFET, RoHS, Halogen Free, SOP-8 DUAL
Type: N+P
Vds(V): 100/-100
Vgs(V): ±20
Id(A): 12/-3,5
Rds(on) mΩ (max) @Vgs=10V: 90/200
Rds(on) mΩ (max) @Vgs=4.5V: 100/220
Rds(on) mΩ (typ) @Vgs=4,5V: 77/182
Rds(on) mΩ (typ) @Vgs=10V: 70/170
Pd(W): 4,5/3,1
ESD Diode: NO
Vgs(th) max (V): 2,5/-2,5
Qg(nC): 26/32
Qgs(nC): 3/5
Qgd(nC): 6/7
Ciss(pF): 1200/1660
Crss(pF): 28/42
Technology: TRENCH
G05P06L GOFORD SEMI SOT-23-3 P -60 ±20 -5 80 90 65 77 2.6
-60V, -5A, P-CHANNEL, Power MOSFET, RoHS, Halogen Free, SOT-23-3
Type: P
Vds(V): -60
Vgs(V): ±20
Id(A): -5
Rds(on) mΩ (max) @Vgs=10V: 80
Rds(on) mΩ (max) @Vgs=4.5V: 90
Rds(on) mΩ (typ) @Vgs=4,5V: 77
Rds(on) mΩ (typ) @Vgs=10V: 65
Pd(W): 2.6
ESD Diode: NO
Vgs(th) max (V): -2.5
Qg(nC): 37
Qgs(nC): 4.5
Qgd(nC): 10.5
Ciss(pF): 1376
Crss(pF): 52
Technology: TRENCH
G05P06LA GOFORD SEMI SOT-23-3 P -60 ±20 -5.5 80 90 65 77 3.1
-60V, -5.5A, P-CHANNEL, Power MOSFET, Automotive, RoHS, Halogen Free, SOT-23-3
Type: P
Vds(V): -60
Vgs(V): ±20
Id(A): -5.5
Rds(on) mΩ (max) @Vgs=10V: 80
Rds(on) mΩ (max) @Vgs=4.5V: 90
Rds(on) mΩ (typ) @Vgs=4,5V: 77
Rds(on) mΩ (typ) @Vgs=10V: 65
Pd(W): 3.1
ESD Diode: NO
Vgs(th) max (V): -2.5
Qg(nC): 37
Qgs(nC): 4.5
Qgd(nC): 10.5
Ciss(pF): 1376
Crss(pF): 52
Technology: TRENCH
G065C03D52 GOFORD SEMI DFN5*6-8L DUAL N+P 30/-30 ±20 30/-30 8.5/32 12/17 7/11 10/14 50/48
30/-30V, 30/-30A, N+P-CHANNEL, Power MOSFET, RoHS, Halogen Free, DFN5*6-8L DUAL
Type: N+P
Vds(V): 30/-30
Vgs(V): ±20
Id(A): 30/-30
Rds(on) mΩ (max) @Vgs=10V: 8.5/32
Rds(on) mΩ (max) @Vgs=4.5V: 12/17
Rds(on) mΩ (typ) @Vgs=4,5V: 10/14
Rds(on) mΩ (typ) @Vgs=10V: 7/11
Pd(W): 50/48
ESD Diode: NO
Vgs(th) max (V): 2,5/-2,5
Qg(nC): 27/52
Qgs(nC): 4/6
Qgd(nC): 6/10
Ciss(pF): 1390/2900
Crss(pF): 188/330
Technology: TRENCH
G06N02H GOFORD SEMI SOT-223 N 20 ±12 6 14.3 11.4 1.8
20V, 6A, N-CHANNEL, Power MOSFET, RoHS, Halogen Free, SOT-223
Type: N
Vds(V): 20
Vgs(V): ±12
Id(A): 6
Rds(on) mΩ (max) @Vgs=4.5V: 14.3
Rds(on) mΩ (typ) @Vgs=4,5V: 11.4
Pd(W): 1.8
Rds(on) mΩ (max) @Vgs=2.5V: 17.1
Rds(on) mΩ (typ) @Vgs=2,5V: 13.5
ESD Diode: NO
Vgs(th) max (V): 0.9
Qg(nC): 12.5
Qgs(nC): 1.2
Qgd(nC): 2.7
Ciss(pF): 1140
Crss(pF): 110
Technology: TRENCH
G06N06S GOFORD SEMI SOP-8 N 60 ±20 8 22 35 15 16.5 2.1
60V, 8A, N-CHANNEL, Power MOSFET, RoHS, Halogen Free, SOP-8
Type: N
Vds(V): 60
Vgs(V): ±20
Id(A): 8
Rds(on) mΩ (max) @Vgs=10V: 22
Rds(on) mΩ (max) @Vgs=4.5V: 35
Rds(on) mΩ (typ) @Vgs=4,5V: 16.5
Rds(on) mΩ (typ) @Vgs=10V: 15
Pd(W): 2.1
ESD Diode: NO
Vgs(th) max (V): 2.4
Qg(nC): 46
Qgs(nC): 5.5
Qgd(nC): 13.4
Ciss(pF): 2477
Crss(pF): 139
Technology: TRENCH
G06NP06DS2 GOFORD SEMI SOP-8 DUAL N+P 60/-60 ±20 3/-6 80/75 85/92 63/60 66/73 1,7/2,8
60/-60V, 3/-6A, N+P-CHANNEL, Power MOSFET, RoHS, Halogen Free, SOP-8 DUAL
Type: N+P
Vds(V): 60/-60
Vgs(V): ±20
Id(A): 3/-6
Rds(on) mΩ (max) @Vgs=10V: 80/75
Rds(on) mΩ (max) @Vgs=4.5V: 85/92
Rds(on) mΩ (typ) @Vgs=4,5V: 66/73
Rds(on) mΩ (typ) @Vgs=10V: 63/60
Pd(W): 1,7/2,8
ESD Diode: NO
Vgs(th) max (V): 1,2/-2,5
Qg(nC): 6/29
Qgs(nC): 1/5
Qgd(nC): 1,3/6
Ciss(pF): 454/1476
Crss(pF): 25/65
Technology: TRENCH
G06NP06S2 GOFORD SEMI SOP-8 DUAL N+P 60/-60 ±20 6/-6 35/45 45 30/37 33 2/2,5
60/-60V, 6/-6A, N+P-CHANNEL, Power MOSFET, RoHS, Halogen Free, SOP-8 DUAL
Type: N+P
Vds(V): 60/-60
Vgs(V): ±20
Id(A): 6/-6
Rds(on) mΩ (max) @Vgs=10V: 35/45
Rds(on) mΩ (max) @Vgs=4.5V: 45
Rds(on) mΩ (typ) @Vgs=4,5V: 33
Rds(on) mΩ (typ) @Vgs=10V: 30/37
Pd(W): 2/2,5
ESD Diode: NO
Vgs(th) max (V): 2,5/-3,5
Qg(nC): 22/25
Qgs(nC): 3,3/4
Qgd(nC): 5,2/7
Ciss(pF): 454/2610
Crss(pF): 25/111
Technology: TRENCH
G06P01E GOFORD SEMI SOT-23 P -12 ±10 -4 28 23 1.8
-12V, -4A, P-CHANNEL, Power MOSFET, RoHS, Halogen Free, SOT-23
Type: P
Vds(V): -12
Vgs(V): ±10
Id(A): -4
Rds(on) mΩ (max) @Vgs=4.5V: 28
Rds(on) mΩ (typ) @Vgs=4,5V: 23
Pd(W): 1.8
Rds(on) mΩ (max) @Vgs=2.5V: 40
Rds(on) mΩ (typ) @Vgs=2,5V: 30
ESD Diode: YES
Vgs(th) max (V): -1
Qg(nC): 14
Qgs(nC): 2.3
Qgd(nC): 3.6
Ciss(pF): 1087
Crss(pF): 253
Technology: TRENCH
G070C03D52 GOFORD SEMI DFN5*6-8L DUAL N+P 30/-30 ±20 65/-19 8.5/22 12/32 7/18 10/25 48/40
30/-30V, 65/-19A, N+P-CHANNEL, Power MOSFET, RoHS, Halogen Free, DFN5*6-8L DUAL
Type: N+P
Vds(V): 30/-30
Vgs(V): ±20
Id(A): 65/-19
Rds(on) mΩ (max) @Vgs=10V: 8.5/22
Rds(on) mΩ (max) @Vgs=4.5V: 12/32
Rds(on) mΩ (typ) @Vgs=4,5V: 10/25
Rds(on) mΩ (typ) @Vgs=10V: 7/18
Pd(W): 48/40
ESD Diode: NO
Vgs(th) max (V): 2,5/-2,0
Qg(nC): 27/23
Qgs(nC): 4/3
Qgd(nC): 6/5
Ciss(pF): 1390/1300
Crss(pF): 188/157
Technology: TRENCH
G070N06T GOFORD SEMI TO-220 N 60 ±20 110 5.5 7.5 4.9 6.4 160
60V, 110A, N-CHANNEL, Power MOSFET, RoHS, Halogen Free, TO-220
Type: N
Vds(V): 60
Vgs(V): ±20
Id(A): 110
Rds(on) mΩ (max) @Vgs=10V: 5.5
Rds(on) mΩ (max) @Vgs=4.5V: 7.5
Rds(on) mΩ (typ) @Vgs=4,5V: 6.4
Rds(on) mΩ (typ) @Vgs=10V: 4.9
Pd(W): 160
ESD Diode: NO
Vgs(th) max (V): 2.5
Qg(nC): 122
Qgs(nC): 17
Qgd(nC): 27
Ciss(pF): 6100
Crss(pF): 333
Technology: TRENCH
G070N06TH GOFORD SEMI TO-220 N 60 ±20 110 6 4.8 160
60V, 110A, N-CHANNEL, Power MOSFET, RoHS, Halogen Free, TO-220
Type: N
Vds(V): 60
Vgs(V): ±20
Id(A): 110
Rds(on) mΩ (max) @Vgs=10V: 6
Rds(on) mΩ (typ) @Vgs=10V: 4.8
Pd(W): 160
ESD Diode: NO
Vgs(th) max (V): 4
Qg(nC): 74
Qgs(nC): 13
Qgd(nC): 33
Ciss(pF): 7050
Crss(pF): 335
Technology: TRENCH
G070N06THA GOFORD SEMI TO-220 N 60 ±20 110 6 4.8 160
60V, 110A, N-CHANNEL, Power MOSFET, Automotive, RoHS, Halogen Free, TO-220
Type: N
Vds(V): 60
Vgs(V): ±20
Id(A): 110
Rds(on) mΩ (max) @Vgs=10V: 6
Rds(on) mΩ (typ) @Vgs=10V: 4.8
Pd(W): 160
ESD Diode: NO
Vgs(th) max (V): 4
Qg(nC): 74
Qgs(nC): 13
Qgd(nC): 33
Ciss(pF): 7050
Crss(pF): 335
Technology: TRENCH
G075N06M GOFORD SEMI TO-263 N 60 ±20 110 7 5.5 160
60V, 110A, N-CHANNEL, Power MOSFET, RoHS, Halogen Free, TO-263
Type: N
Vds(V): 60
Vgs(V): ±20
Id(A): 110
Rds(on) mΩ (max) @Vgs=10V: 7
Rds(on) mΩ (typ) @Vgs=10V: 5.5
Pd(W): 160
ESD Diode: NO
Vgs(th) max (V): 4
Qg(nC): 90
Qgs(nC): 9
Qgd(nC): 18
Ciss(pF): 6443
Crss(pF): 295
Technology: TRENCH
G075N06MA GOFORD SEMI TO-263 N 60 ±20 110 7 5.5 160
60V, 110A, N-CHANNEL, Power MOSFET, Automotive, RoHS, Halogen Free, TO-263
Type: N
Vds(V): 60
Vgs(V): ±20
Id(A): 110
Rds(on) mΩ (max) @Vgs=10V: 7
Rds(on) mΩ (typ) @Vgs=10V: 5.5
Pd(W): 160
ESD Diode: NO
Vgs(th) max (V): 4
Qg(nC): 90
Qgs(nC): 9
Qgd(nC): 18
Ciss(pF): 6443
Crss(pF): 295
Technology: TRENCH
G075N06MI GOFORD SEMI TO-263 N 60 ±20 110 7 5.5 160
60V, 110A, N-CHANNEL, Power MOSFET, RoHS, Halogen Free, TO-263
Type: N
Vds(V): 60
Vgs(V): ±20
Id(A): 110
Rds(on) mΩ (max) @Vgs=10V: 7
Rds(on) mΩ (typ) @Vgs=10V: 5.5
Pd(W): 160
ESD Diode: NO
Vgs(th) max (V): 4
Qg(nC): 90
Qgs(nC): 9
Qgd(nC): 18
Ciss(pF): 6443
Crss(pF): 295
Technology: TRENCH
G075P02D5 GOFORD SEMI DFN5*6-8L P -20 ±12 -45 7.5 6.3 63
-20V, -45A, P-CHANNEL, Power MOSFET, RoHS, Halogen Free, DFN5*6-8L
Type: P
Vds(V): -20
Vgs(V): ±12
Id(A): -45
Rds(on) mΩ (max) @Vgs=4.5V: 7.5
Rds(on) mΩ (typ) @Vgs=4,5V: 6.3
Pd(W): 63
Rds(on) mΩ (max) @Vgs=2.5V: 10
Rds(on) mΩ (typ) @Vgs=2,5V: 8.1
ESD Diode: NO
Vgs(th) max (V): -1
Qg(nC): 44
Qgs(nC): 9
Qgd(nC): 11
Ciss(pF): 4775
Crss(pF): 597
Technology: TRENCH
G07P04S GOFORD SEMI SOP-8 P -40 ±20 -7 18 22 14 18 2.5
-40V, -7A, P-CHANNEL, Power MOSFET, RoHS, Halogen Free, SOP-8
Type: P
Vds(V): -40
Vgs(V): ±20
Id(A): -7
Rds(on) mΩ (max) @Vgs=10V: 18
Rds(on) mΩ (max) @Vgs=4.5V: 22
Rds(on) mΩ (typ) @Vgs=4,5V: 18
Rds(on) mΩ (typ) @Vgs=10V: 14
Pd(W): 2.5
ESD Diode: NO
Vgs(th) max (V): -2.5
Qg(nC): 31
Qgs(nC): 7.6
Qgd(nC): 6.2
Ciss(pF): 1750
Crss(pF): 180
Technology: TRENCH
G07P04SA GOFORD SEMI SOP-8 P -40 ±20 -7 18 22 14 18 2.5
-40V, -7A, P-CHANNEL, Power MOSFET, Automotive, RoHS, Halogen Free, SOP-8
Type: P
Vds(V): -40
Vgs(V): ±20
Id(A): -7
Rds(on) mΩ (max) @Vgs=10V: 18
Rds(on) mΩ (max) @Vgs=4.5V: 22
Rds(on) mΩ (typ) @Vgs=4,5V: 18
Rds(on) mΩ (typ) @Vgs=10V: 14
Pd(W): 2.5
ESD Diode: NO
Vgs(th) max (V): -2.5
Qg(nC): 31
Qgs(nC): 7.6
Qgd(nC): 6.2
Ciss(pF): 1750
Crss(pF): 180
Technology: TRENCH
G080N06K GOFORD SEMI TO-252 N 60 ±20 80 8 6.6 110
60V, 80A, N-CHANNEL, Power MOSFET, RoHS, Halogen Free, TO-252
Type: N
Vds(V): 60
Vgs(V): ±20
Id(A): 80
Rds(on) mΩ (max) @Vgs=10V: 8
Rds(on) mΩ (typ) @Vgs=10V: 6.6
Pd(W): 110
ESD Diode: NO
Vgs(th) max (V): 4
Qg(nC): 77
Qgs(nC): 7
Qgd(nC): 15
Ciss(pF): 3408
Crss(pF): 212
Technology: TRENCH
G080N10M GOFORD SEMI TO-263 N 100 ±20 140 7.5 8 5.6 6.2 236
100V, 140A, N-CHANNEL, Power MOSFET, RoHS, Halogen Free, TO-263
Type: N
Vds(V): 100
Vgs(V): ±20
Id(A): 140
Rds(on) mΩ (max) @Vgs=10V: 7.5
Rds(on) mΩ (max) @Vgs=4.5V: 8
Rds(on) mΩ (typ) @Vgs=4,5V: 6.2
Rds(on) mΩ (typ) @Vgs=10V: 5.6
Pd(W): 236
ESD Diode: NO
Vgs(th) max (V): 2.5
Qg(nC): 192
Qgs(nC): 49
Qgd(nC): 23
Ciss(pF): 13950
Crss(pF): 362
Technology: TRENCH
G080N10T GOFORD SEMI TO-220 N 100 ±20 140 7.5 8 5.8 6.4 236
100V, 140A, N-CHANNEL, Power MOSFET, RoHS, Halogen Free, TO-220
Type: N
Vds(V): 100
Vgs(V): ±20
Id(A): 140
Rds(on) mΩ (max) @Vgs=10V: 7.5
Rds(on) mΩ (max) @Vgs=4.5V: 8
Rds(on) mΩ (typ) @Vgs=4,5V: 6.4
Rds(on) mΩ (typ) @Vgs=10V: 5.8
Pd(W): 236
ESD Diode: NO
Vgs(th) max (V): 2.5
Qg(nC): 192
Qgs(nC): 49
Qgd(nC): 23
Ciss(pF): 13912
Crss(pF): 363
Technology: TRENCH